? semiconductor components industries, llc, 2012 january, 2012 ? rev. 3 1 publication order number: mbrm110e/d mbrm110et1g, NRVBM110ET1G surface mount schottky power rectifier powermite ? power surface mount package the schottky powermite ? employs the schottky barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop ? reverse current tradeoff. the advanced packaging techniques provide for a highly efficient micro miniature, space saving surface mount rectifier. with its unique heatsink design, the powermite ? has the same thermal performance as the sma while being 50% smaller in footprint area, and delivering one of the lowest height profiles, ? 1.1 mm in the industry. because of its small size, it is ideal for use in portable and battery powered products such as cellular and cordless phones, chargers, notebook computers, printers, pdas and pcmcia cards. typical applications are ac ? dc and dc ? dc converters, reverse battery protection, and ?oring? of multiple supply voltages and any other application where performance and size are critical. features ? low i r extends battery life ? low profile ? maximum height of 1.1 mm ? small footprint ? footprint area of 8.45 mm 2 ? 150 ? c operating junction temperature ? low thermal resistance with direct thermal path of die on exposed cathode heat sink ? esd ratings: ? human body model = 3b (> 16 kv) ? machine model = v (> 400 v) ? aec ? q101 qualified and ppap capable ? nrvb prefix for automotive and other applications requiring unique site and control change requirements ? all packages are pb ? free* mechanical characteristics: ? powermite ? is jedec registered as d0 ? 216aa ? case: molded epoxy ? epoxy meets ul 94 v ? 0 @ 0.125 in ? weight: 16.3 mg (approximately) ? lead and mounting surface temperature for soldering purposes: 260 ? c maximum for 10 seconds *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. schottky barrier rectifier 1.0 amperes, 10 volts device package shipping ? ordering information mbrm110et1g powermite (pb ? free) 3,000 / tape & reel mbrm110et3g powermite (pb ? free) 12,000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. powermite case 457 plastic cathode anode marking diagram http://onsemi.com m = date code 1e1 = device code = pb ? free package NRVBM110ET1G powermite (pb ? free) 3,000 / tape & reel m 1e1 12
mbrm110et1g, NRVBM110ET1G http://onsemi.com 2 maximum ratings rating symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 10 v average rectified forward current (t l = 100 ? c) i o 1.0 a non ? repetitive peak surge current (non ? repetitive peak surge current, halfwave, single phase, 60 hz) i fsm 50 a storage temperature t stg ? 55 to +150 ? c operating junction temperature t j ? 55 to +150 ? c voltage rate of change (rated v r , t j = 25 ? c) dv/dt 10,000 v/ s stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may af fect device reliability. thermal characteristics characteristic symbol value unit thermal resistance, junction ? to ? lead (anode) (note 1) thermal resistance, junction ? to ? tab (cathode) (note 1) thermal resistance, junction ? to ? ambient (note 1) r tjl r tjtab r tja 35 23 277 ? c/w 1. mounted with minimum recommended pad size, pc board fr4, see figures 8 and 9. electrical characteristics characteristic symbol value unit maximum instantaneous forward voltage (note 2) v f t j = 25 ? c t j = 100 ? c v (i f = 0.1 a) (i f = 1.0 a) (i f = 2.0 a) v f 0.455 0.530 0.595 0.360 0.455 0.540 v maximum instantaneous reverse current (note 2) i r t j = 25 ? c t j = 100 ? c a (v r = 5.0 v) (v r = 10 v) 0.5 1.0 300 500 2. pulse test: pulse width ? 250 s, duty cycle ? 2%. figure 1. typical forward voltage figure 2. maximum forward voltage 0.2 v f , instantaneous forward voltage (volts) 10 1.0 v f , maximum instantaneous forward voltage (volts) i f , instantaneous forward current (amps) 0.1 0.6 0.4 0.8 i f , instantaneous forward current (amps) t j = 100 ? c t j = 150 ? c t j = -40 ? c t j = 25 ? c 0.2 10 1.0 0.1 0.6 0.4 0.8 t j = 100 ? c t j = 150 ? c t j = 25 ? c
mbrm110et1g, NRVBM110ET1G http://onsemi.com 3 figure 3. typical reverse current figure 4. maximum reverse current 10 0 v r , reverse voltage (volts) 100e-3 10e-3 10e-6 1e-6 100e-9 10e-9 v r , reverse voltage (volts) i 2.5 5 7.5 , reverse current (amps) r 10 0 v r , reverse voltage (volts) 100e-3 10e-3 1e-3 100e-9 10e-9 i 2.5 5 7.5 , maximum reverse current (amps) r t j = 150 ? c t j = 100 ? c t j = 25 ? c t j = 150 ? c t j = 100 ? c t j = 25 ? c 100e-6 10e-6 1e-6 100e-6 1e-3 i pk /i o = 5 figure 5. current derating figure 6. forward power dissipation 45 85 25 t l , lead temperature ( ? c) 1.8 1.2 1.0 0.8 0.2 0 i o , average forward current (amps) 0.2 0 0.7 0.6 0.5 0.3 0.1 0 1.0 65 , average forward current (amps) i o 105 145 125 1.4 0.4 0.8 1.2 1.6 0.4 p fo , average power dissipation (watts) 165 1.6 square wave dc i pk /i o = i pk /i o = 10 i pk /i o = 20 i pk /i o = 20 i pk /i o = 10 i pk /i o = 5 i pk /i o = square wave dc 0.6 0.4 freq = 20 khz 0.6 1.4 0.2 figure 7. capacitance 6 0 v r , reverse voltage (volts) 1000 100 10 c, capacitance (pf) 3 12 45 t j = 25 ? c 10 9 8 7
mbrm110et1g, NRVBM110ET1G http://onsemi.com 4 t, time (s) 1.0 0.1 0.01 0.001 100 0.1 0.00001 1,000 0.0001 0.001 0.01 1.0 10 rtjl(t) = rtjl*r(t) 50% 20% 10% 5.0% 2.0% 1.0% figure 8. thermal response junction to lead 100 0.1 0.00001 t, time (s) 1.0 0.1 0.01 r 0.0001 0.001 0.01 1.0 10 0.001 , transient thermal resistance (normalized) (t) rtjl(t) = rtjl*r(t) 50% 20% 10% 5.0% 2.0% 1.0% figure 9. thermal response junction to ambient r , transient thermal resistance (normalized) (t)
mbrm110et1g, NRVBM110ET1G http://onsemi.com 5 package dimensions powermite case 457 ? 04 issue e dim min max min max inches millimeters a 1.75 2.05 0.069 0.081 b 1.75 2.18 0.069 0.086 c 0.85 1.15 0.033 0.045 d 0.40 0.69 0.016 0.027 f 0.70 1.00 0.028 0.039 h -0.05 +0.10 -0.002 +0.004 j 0.10 0.25 0.004 0.010 k 3.60 3.90 0.142 0.154 l 0.50 0.80 0.020 0.031 r 1.20 1.50 0.047 0.059 s notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 3. dimension a does not include mold flash, protrusions or gate burrs. mold flash, protrusions or gate burrs shall not exceed 0.15 (0.006) per side. s b m 0.08 (0.003) c s t ? a ? ? b ? s j k ? t ? h l j c d s b m 0.08 (0.003) c s t f pin 1 pin 2 r 0.50 ref 0.019 ref 2.54 0.100 0.635 0.025 1.27 0.050 2.67 0.105 0.762 0.030 mm inches scale 10:1 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* style 1: pin 1. cathode 2. anode on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 mbrm110e/d powermite is a registered trademark of and used under a license from microsemi corporation. literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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